Performance of InP/InGaAs Heterojunction Bipolar Transistors For 40Gb/s OEIC Applications
نویسندگان
چکیده
A high performance InP/InGaAs SHBT technology will be presented. InP SHBT is advantageous in terms of low-cost monolithic integration with photodiodes for high-speed optical receiver frontend applications. We will demonstrate that, through optimized CAD geometries, the fabricated HBTs showed uniform and improved device performance. Our best results show that an fT of over 160 GHz and fmax of greater than 250 GHz are achieved on InP/InGaAs SHBTs with a collector thickness of 3000Å.
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